Institute of Physics
University of Latvia

IPUL-MHD Fifth Framework Project

Workpackage No 3

Work package number and title:

3. Training of junior IPUL researchers abroad in the field of crystal growth

Type of activity: Junior training abroad (VR)

Relative start month: 6
Timetable: first year – 2 months, second year – 2 months, third year – 2 months (altogether 6 months)


  1. Latvia University has established a fruitful collaboration with the group “Floating-Zone, Czochralski” at the Institute for Crystal Growth (ICG) (Berlin, Germany). The group is very well technically and experimentally equipped; its leader Dr. H. Riemann is an internationally recognized high level specialist in experimental crystal growth. The group performs excellent experiments in silicon crystal growth, especially by Floating zone method and Si-Ge crystal growth by Czochralski method. The visit will allow to obtain and analyze the newest experimental information on the field of Floating-Zone crystal growth, especially the dependence of the shape of molten zone and resistivity distributions in grown crystals on process parameters. This information will be used for the further development of mathematical models in Riga (WP6, WP9) and will significantly support our activities planned in the work package WP1.
  2. Transition to turbulence is a topical question in a number of crystal growth technologies, particularly those of use in opto-electronic. These materials need particularly stable growth conditions. Presently no closed theory can predict the transition conditions in case of the intermittency route to turbulence. Aims of this package are to develop numerical techniques of study of intermittent (or non-linear) transition; to support theoretical and coordinate experimental research activities on this topic in WP10, FZ-Rossendorf and Bergakademie Freiberg; to formalize research results; to introduce new links with centres of basic research of the non-linear transition. Practical aim of the package is to identify cost-efficient means of delaying the transition needed to grow larger top quality single crystals for opto-electronic devices.

[Institute of Physics of University of Latvia, 2003]